Improvement of interface properties of AlGaN/GaN heterostructures under gamma-radiation

• Published in: Applied surface science 2008-11, Vol.255 (3), p.784-786
• Main Authors: Vitusevich, S.A., Kurakin, A.M., Konakova, R.V., Belyaev, A.E., Klein, N.
• Format: Article
• Language: English
• Subjects: AlGaN/GaN heterostructures; Cathodoluminescence; Cathodoluminescence, ionoluminescence; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in interface structures; Exact sciences and technology; Gamma radiation; Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Iii-v semiconductors; Interface; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Other luminescence and radiative recombination; Physical radiation effects, radiation damage; Physics; Structure of solids and liquids; crystallography; Transport; γ ray effects
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2008.07.029

The cathodoluminescence (CL) spectra of AlGaN/GaN heterostructures grown on sapphire substrate were studied before and after gamma irradiation treatment. The CL spectroscopy results reveal strong yellow and blue luminescence transformation under gamma radiation treatment. The changes in CL spectra are compared with changes in the electrical characteristics of two-dimensional gas in AlGaN/GaN heterostructures. The origins of the observed improvement in properties of AlGaN/GaN heterostructures after gamma radiation treatment with 1 × 10 6 rad are discussed on the basis of compensation and structural ordering of native defects.