Modifications of the DC Raytheon-Statz model for SiC MESFETs

In the paper the problem of modelling DC characteristics of SiC MESFETs is presented. Some modifications of the popular Raytheon–Statz model built‐in in SPICE are proposed. The original and the modified models are verified experimentally by comparison of the measured and simulated device characteris...

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Bibliographic Details
Published in:International journal of numerical modelling 2008-11, Vol.21 (6), p.583-590
Main Authors: Zarębski, Janusz, Bisewski, Damian
Format: Article
Language:English
Subjects:
MESFETs
modelling
SPICE
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Summary:In the paper the problem of modelling DC characteristics of SiC MESFETs is presented. Some modifications of the popular Raytheon–Statz model built‐in in SPICE are proposed. The original and the modified models are verified experimentally by comparison of the measured and simulated device characteristics. One of the two available today on the market SiC MESFETs–the transistor CRF24010 offered by Cree, Inc. is chosen for investigations. Copyright © 2008 John Wiley & Sons, Ltd.
ISSN:0894-3370
1099-1204
DOI:10.1002/jnm.696