Loading…

A novel loading and demoulding process control in UV nanoimprint lithography

In UV nanoimprint lithography (NIL) with elastic mould, a novel multi-step loading and demoulding process, called distortion reduction by pressure releasing (DRPR) and two-step curing method for demoulding, is developed. This novel imprint process is continuous, the pressure releasing method, used t...

Full description

Saved in:
Bibliographic Details
Published in:Microelectronic engineering 2009, Vol.86 (1), p.4-9
Main Authors: Liu, Hongzhong, Jiang, Weitao, Ding, Yucheng, Tang, Yiping, Lu, Bingheng, Lan, Hongbo, Shi, Yongsheng, Yin, Lei
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c358t-ce83a1934755f105d6d468f2bd4a5813e6c32a2a63dcd7b5ccebf4b394b614bc3
cites cdi_FETCH-LOGICAL-c358t-ce83a1934755f105d6d468f2bd4a5813e6c32a2a63dcd7b5ccebf4b394b614bc3
container_end_page 9
container_issue 1
container_start_page 4
container_title Microelectronic engineering
container_volume 86
creator Liu, Hongzhong
Jiang, Weitao
Ding, Yucheng
Tang, Yiping
Lu, Bingheng
Lan, Hongbo
Shi, Yongsheng
Yin, Lei
description In UV nanoimprint lithography (NIL) with elastic mould, a novel multi-step loading and demoulding process, called distortion reduction by pressure releasing (DRPR) and two-step curing method for demoulding, is developed. This novel imprint process is continuous, the pressure releasing method, used to optimize the loading process, can reduce the distortions of imprint mould and wafer stage, while obtain better cavity filling and thin and uniform residual layer; through two-step curing method instead of traditional simple demoulding, the curing degree of resist can be controlled, which is helpful to decrease the demoulding force and avoid residual layer pulled-up while ensure replicated protrusions not collapse. It is a novel and robust process with high fidelity of pattern replication in micro/nano structures fabrication, and the replication error caused by distortions and “blind” demoulding can be reduced effectively.
doi_str_mv 10.1016/j.mee.2008.08.012
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_36114660</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0167931708003596</els_id><sourcerecordid>36114660</sourcerecordid><originalsourceid>FETCH-LOGICAL-c358t-ce83a1934755f105d6d468f2bd4a5813e6c32a2a63dcd7b5ccebf4b394b614bc3</originalsourceid><addsrcrecordid>eNp9kE9LAzEQxYMoWKsfwFsuetuabHazKZ5K8R8UvFivIZvMtinZpCbbQr-9qRWPwsAw8Hszbx5Ct5RMKKH8YTPpASYlIWJyLFqeoREVDSvqmotzNMpMU0wZbS7RVUobkueKiBFazLAPe3DYBWWsX2HlDTbQh537GbcxaEgJ6-CHGBy2Hi8_sVc-2H4brR-ws8M6rKLarg_X6KJTLsHNbx-j5fPTx_y1WLy_vM1ni0KzWgyFBsEUnbKqqeuOktpwU3HRla2pVC0oA65ZqUrFmdGmaWutoe2qlk2rltOq1WyM7k97s7uvHaRB9jZpcE55CLskGae04pxkkJ5AHUNKETqZPfcqHiQl8pib3MicmzzmJo9Fy6y5-12uklaui8prm_6EZZY1Uy4y93jiIH-6txBl0ha8BmMj6EGaYP-58g3EQYNr</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>36114660</pqid></control><display><type>article</type><title>A novel loading and demoulding process control in UV nanoimprint lithography</title><source>ScienceDirect Freedom Collection 2022-2024</source><creator>Liu, Hongzhong ; Jiang, Weitao ; Ding, Yucheng ; Tang, Yiping ; Lu, Bingheng ; Lan, Hongbo ; Shi, Yongsheng ; Yin, Lei</creator><creatorcontrib>Liu, Hongzhong ; Jiang, Weitao ; Ding, Yucheng ; Tang, Yiping ; Lu, Bingheng ; Lan, Hongbo ; Shi, Yongsheng ; Yin, Lei</creatorcontrib><description>In UV nanoimprint lithography (NIL) with elastic mould, a novel multi-step loading and demoulding process, called distortion reduction by pressure releasing (DRPR) and two-step curing method for demoulding, is developed. This novel imprint process is continuous, the pressure releasing method, used to optimize the loading process, can reduce the distortions of imprint mould and wafer stage, while obtain better cavity filling and thin and uniform residual layer; through two-step curing method instead of traditional simple demoulding, the curing degree of resist can be controlled, which is helpful to decrease the demoulding force and avoid residual layer pulled-up while ensure replicated protrusions not collapse. It is a novel and robust process with high fidelity of pattern replication in micro/nano structures fabrication, and the replication error caused by distortions and “blind” demoulding can be reduced effectively.</description><identifier>ISSN: 0167-9317</identifier><identifier>EISSN: 1873-5568</identifier><identifier>DOI: 10.1016/j.mee.2008.08.012</identifier><identifier>CODEN: MIENEF</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Demoulding ; Electronics ; Exact sciences and technology ; Loading ; Micro/nanostructure ; Microelectronic fabrication (materials and surfaces technology) ; Nanoimprint lithography (NIL) process ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Microelectronic engineering, 2009, Vol.86 (1), p.4-9</ispartof><rights>2008 Elsevier B.V.</rights><rights>2009 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c358t-ce83a1934755f105d6d468f2bd4a5813e6c32a2a63dcd7b5ccebf4b394b614bc3</citedby><cites>FETCH-LOGICAL-c358t-ce83a1934755f105d6d468f2bd4a5813e6c32a2a63dcd7b5ccebf4b394b614bc3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,4024,27923,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=21017968$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Liu, Hongzhong</creatorcontrib><creatorcontrib>Jiang, Weitao</creatorcontrib><creatorcontrib>Ding, Yucheng</creatorcontrib><creatorcontrib>Tang, Yiping</creatorcontrib><creatorcontrib>Lu, Bingheng</creatorcontrib><creatorcontrib>Lan, Hongbo</creatorcontrib><creatorcontrib>Shi, Yongsheng</creatorcontrib><creatorcontrib>Yin, Lei</creatorcontrib><title>A novel loading and demoulding process control in UV nanoimprint lithography</title><title>Microelectronic engineering</title><description>In UV nanoimprint lithography (NIL) with elastic mould, a novel multi-step loading and demoulding process, called distortion reduction by pressure releasing (DRPR) and two-step curing method for demoulding, is developed. This novel imprint process is continuous, the pressure releasing method, used to optimize the loading process, can reduce the distortions of imprint mould and wafer stage, while obtain better cavity filling and thin and uniform residual layer; through two-step curing method instead of traditional simple demoulding, the curing degree of resist can be controlled, which is helpful to decrease the demoulding force and avoid residual layer pulled-up while ensure replicated protrusions not collapse. It is a novel and robust process with high fidelity of pattern replication in micro/nano structures fabrication, and the replication error caused by distortions and “blind” demoulding can be reduced effectively.</description><subject>Applied sciences</subject><subject>Demoulding</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Loading</subject><subject>Micro/nanostructure</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Nanoimprint lithography (NIL) process</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0167-9317</issn><issn>1873-5568</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp9kE9LAzEQxYMoWKsfwFsuetuabHazKZ5K8R8UvFivIZvMtinZpCbbQr-9qRWPwsAw8Hszbx5Ct5RMKKH8YTPpASYlIWJyLFqeoREVDSvqmotzNMpMU0wZbS7RVUobkueKiBFazLAPe3DYBWWsX2HlDTbQh537GbcxaEgJ6-CHGBy2Hi8_sVc-2H4brR-ws8M6rKLarg_X6KJTLsHNbx-j5fPTx_y1WLy_vM1ni0KzWgyFBsEUnbKqqeuOktpwU3HRla2pVC0oA65ZqUrFmdGmaWutoe2qlk2rltOq1WyM7k97s7uvHaRB9jZpcE55CLskGae04pxkkJ5AHUNKETqZPfcqHiQl8pib3MicmzzmJo9Fy6y5-12uklaui8prm_6EZZY1Uy4y93jiIH-6txBl0ha8BmMj6EGaYP-58g3EQYNr</recordid><startdate>2009</startdate><enddate>2009</enddate><creator>Liu, Hongzhong</creator><creator>Jiang, Weitao</creator><creator>Ding, Yucheng</creator><creator>Tang, Yiping</creator><creator>Lu, Bingheng</creator><creator>Lan, Hongbo</creator><creator>Shi, Yongsheng</creator><creator>Yin, Lei</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>2009</creationdate><title>A novel loading and demoulding process control in UV nanoimprint lithography</title><author>Liu, Hongzhong ; Jiang, Weitao ; Ding, Yucheng ; Tang, Yiping ; Lu, Bingheng ; Lan, Hongbo ; Shi, Yongsheng ; Yin, Lei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c358t-ce83a1934755f105d6d468f2bd4a5813e6c32a2a63dcd7b5ccebf4b394b614bc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Applied sciences</topic><topic>Demoulding</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Loading</topic><topic>Micro/nanostructure</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Nanoimprint lithography (NIL) process</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, Hongzhong</creatorcontrib><creatorcontrib>Jiang, Weitao</creatorcontrib><creatorcontrib>Ding, Yucheng</creatorcontrib><creatorcontrib>Tang, Yiping</creatorcontrib><creatorcontrib>Lu, Bingheng</creatorcontrib><creatorcontrib>Lan, Hongbo</creatorcontrib><creatorcontrib>Shi, Yongsheng</creatorcontrib><creatorcontrib>Yin, Lei</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liu, Hongzhong</au><au>Jiang, Weitao</au><au>Ding, Yucheng</au><au>Tang, Yiping</au><au>Lu, Bingheng</au><au>Lan, Hongbo</au><au>Shi, Yongsheng</au><au>Yin, Lei</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A novel loading and demoulding process control in UV nanoimprint lithography</atitle><jtitle>Microelectronic engineering</jtitle><date>2009</date><risdate>2009</risdate><volume>86</volume><issue>1</issue><spage>4</spage><epage>9</epage><pages>4-9</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><coden>MIENEF</coden><abstract>In UV nanoimprint lithography (NIL) with elastic mould, a novel multi-step loading and demoulding process, called distortion reduction by pressure releasing (DRPR) and two-step curing method for demoulding, is developed. This novel imprint process is continuous, the pressure releasing method, used to optimize the loading process, can reduce the distortions of imprint mould and wafer stage, while obtain better cavity filling and thin and uniform residual layer; through two-step curing method instead of traditional simple demoulding, the curing degree of resist can be controlled, which is helpful to decrease the demoulding force and avoid residual layer pulled-up while ensure replicated protrusions not collapse. It is a novel and robust process with high fidelity of pattern replication in micro/nano structures fabrication, and the replication error caused by distortions and “blind” demoulding can be reduced effectively.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.mee.2008.08.012</doi><tpages>6</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0167-9317
ispartof Microelectronic engineering, 2009, Vol.86 (1), p.4-9
issn 0167-9317
1873-5568
language eng
recordid cdi_proquest_miscellaneous_36114660
source ScienceDirect Freedom Collection 2022-2024
subjects Applied sciences
Demoulding
Electronics
Exact sciences and technology
Loading
Micro/nanostructure
Microelectronic fabrication (materials and surfaces technology)
Nanoimprint lithography (NIL) process
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title A novel loading and demoulding process control in UV nanoimprint lithography
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T19%3A16%3A39IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20novel%20loading%20and%20demoulding%20process%20control%20in%20UV%20nanoimprint%20lithography&rft.jtitle=Microelectronic%20engineering&rft.au=Liu,%20Hongzhong&rft.date=2009&rft.volume=86&rft.issue=1&rft.spage=4&rft.epage=9&rft.pages=4-9&rft.issn=0167-9317&rft.eissn=1873-5568&rft.coden=MIENEF&rft_id=info:doi/10.1016/j.mee.2008.08.012&rft_dat=%3Cproquest_cross%3E36114660%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c358t-ce83a1934755f105d6d468f2bd4a5813e6c32a2a63dcd7b5ccebf4b394b614bc3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=36114660&rft_id=info:pmid/&rfr_iscdi=true