The effect of additional Si and SiGe layers on the confinement potential of GeMn diluted ferromagnetic semiconductor

• Published in: Applied surface science 2008-11, Vol.255 (3), p.709-711
• Main Authors: Rodrigues, S.C.P., Araújo, Y.R.V., Sipahi, G.M., Scolfaro, L.M.R., da Silva, E.F.
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in condensed matter; Exact sciences and technology; Ferromagnetism; GeMn; LK model; Physics; Spin polarized transport; Spin polarized transport in semiconductors; Spin-polarized charge distribution
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2008.07.015

In this work we analyze the spin-polarized charge density distribution in the GeMn diluted ferromagnetic semiconductors (DFS). The calculations are performed within a self-consistent k· p method, in which the exchange correlation effects in the local density approximation, as well as the strain effects due to the lattice mismatch, are taken into account. Our findings show that the extra confinement potential provided by the barriers and the variation of the Mn content in the DFS are responsible for a separation between the different spin charge densities, giving rise to higher mobility spin-polarized currents or high ferromagnetism transition temperatures systems.