B18H22 Implantation for the Source-Drain Extension in 45 nm-node PMOSFETs and Beyond

We investigated the application properties of cluster implantation for MSA processing. We successfully replaced BF2 with B18H22 to SDE implantation in pMOSFETs with the activation processing of MSA and spike-RTA. In the activation processing with only MSA, we found from blank wafer that B18H22 impla...

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Published in:Ion Implantation Technology 2008 2008-01, Vol.1066, p.391-394
Main Authors: Kawasaki, Y, Endo, S, Kitazawa, M, Maruyama, Y, Yamashita, T, Kuroi, T, Yoshimura, H, Kojima, M
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container_title Ion Implantation Technology 2008
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creator Kawasaki, Y
Endo, S
Kitazawa, M
Maruyama, Y
Yamashita, T
Kuroi, T
Yoshimura, H
Kojima, M
description We investigated the application properties of cluster implantation for MSA processing. We successfully replaced BF2 with B18H22 to SDE implantation in pMOSFETs with the activation processing of MSA and spike-RTA. In the activation processing with only MSA, we found from blank wafer that B18H22 implant is more advantageous from the viewpoint of Rs, Xj and leakage current, compared to B, BF2 and B with Ge-PAI.
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title B18H22 Implantation for the Source-Drain Extension in 45 nm-node PMOSFETs and Beyond
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