Trivacancy in silicon: A combined DLTS and ab-initio modeling study

Deep level transient spectroscopy and ab-initio modeling have been used for identification of energy levels and structure of trivacancy (V3) in Si. It is found that in the neutral charge state the V3 is bistable, with the “fourfold” configuration being lower in energy than the (110) planar configura...

Full description

Saved in:
Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2009-12, Vol.404 (23-24), p.4565-4567
Main Authors: Markevich, V.P., Peaker, A.R., Lastovskii, S.B., Murin, L.I., Coutinho, J., Markevich, A.V., Torres, V.J.B., Briddon, P.R., Dobaczewski, L., Monakhov, E.V., Svensson, B.G.
Format: Article
Language:English
Subjects:
Ab-initio modeling
DLTS
Energy levels
Silicon
Trivacancy
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Deep level transient spectroscopy and ab-initio modeling have been used for identification of energy levels and structure of trivacancy (V3) in Si. It is found that in the neutral charge state the V3 is bistable, with the “fourfold” configuration being lower in energy than the (110) planar configuration. V3 in the (110) planar configuration gives rise to two acceptor levels at Ec−0.36eV and Ec−0.46eV in the gap, while in the “fourfold” configuration the defect has trigonal symmetry and an acceptor level at Ec−0.075eV.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2009.08.142