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A 0.6-V Delta-Sigma Modulator With Subthreshold-Leakage Suppression Switches
A 0.6-V 34-muW delta-sigma modulator implemented by using a standard 0.13-mum complementary metal-oxide-semiconductor technology is presented. This brief analyzes a subthreshold-leakage current problem in switched-capacitor circuits and proposes subthreshold-leakage suppression switches to solve the...
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Published in: | IEEE transactions on circuits and systems. II, Express briefs Express briefs, 2009-11, Vol.56 (11), p.825-829 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | A 0.6-V 34-muW delta-sigma modulator implemented by using a standard 0.13-mum complementary metal-oxide-semiconductor technology is presented. This brief analyzes a subthreshold-leakage current problem in switched-capacitor circuits and proposes subthreshold-leakage suppression switches to solve the problem. To verify the operation of the subthreshold-leakage suppression switches, two different fifth-order delta-sigma modulators are implemented with conventional switches and new switches. The input feedforward architecture is used to reduce the voltage swings of the integrators. A high-performance low-quiescent amplifier architecture is developed for the modulator. The modulator, with new switches, achieves a dynamic range of 83 dB, a peak signal-to-noise ratio of 82 dB, and a peak signal-to-noise-plus-distortion ratio of 81 dB in a signal bandwidth of 20 kHz. The power consumption is 34 muW for the modulator, and the core chip size is 0.33 mm 2 . |
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ISSN: | 1549-7747 1558-3791 |
DOI: | 10.1109/TCSII.2009.2032444 |