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A 0.6-V Delta-Sigma Modulator With Subthreshold-Leakage Suppression Switches

A 0.6-V 34-muW delta-sigma modulator implemented by using a standard 0.13-mum complementary metal-oxide-semiconductor technology is presented. This brief analyzes a subthreshold-leakage current problem in switched-capacitor circuits and proposes subthreshold-leakage suppression switches to solve the...

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Bibliographic Details
Published in:IEEE transactions on circuits and systems. II, Express briefs Express briefs, 2009-11, Vol.56 (11), p.825-829
Main Authors: Roh, Hyungdong, Kim, Hyoungjoong, Choi, Youngkil, Roh, Jeongjin, Kim, Yi-Gyeong, Kwon, Jong-Kee
Format: Article
Language:English
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Summary:A 0.6-V 34-muW delta-sigma modulator implemented by using a standard 0.13-mum complementary metal-oxide-semiconductor technology is presented. This brief analyzes a subthreshold-leakage current problem in switched-capacitor circuits and proposes subthreshold-leakage suppression switches to solve the problem. To verify the operation of the subthreshold-leakage suppression switches, two different fifth-order delta-sigma modulators are implemented with conventional switches and new switches. The input feedforward architecture is used to reduce the voltage swings of the integrators. A high-performance low-quiescent amplifier architecture is developed for the modulator. The modulator, with new switches, achieves a dynamic range of 83 dB, a peak signal-to-noise ratio of 82 dB, and a peak signal-to-noise-plus-distortion ratio of 81 dB in a signal bandwidth of 20 kHz. The power consumption is 34 muW for the modulator, and the core chip size is 0.33 mm 2 .
ISSN:1549-7747
1558-3791
DOI:10.1109/TCSII.2009.2032444