AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz

• Published in: IEEE electron device letters 2010-01, Vol.31 (1), p.11-13
• Main Authors: Sarazin, N., Morvan, E., di Forte Poisson, M.A., Oualli, M., Gaquiere, C., Jardel, O., Drisse, O., Tordjman, M., Magis, M., Delage, S.L.
• Format: Article
• Language: English
• Subjects: AlInN; Aluminum gallium nitride; Applied sciences; Chemical technology; Chemical vapor deposition; Compound structure devices; Electronics; Exact sciences and technology; Gallium nitride; GaN; HEMTs; high-electron-mobility transistor (HEMT); Interfaces; metal-organic chemical vapor deposition; Microelectronic fabrication (materials and surfaces technology); MODFETs; Ohmic contacts; Power generation; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon carbide; Transconductance; Transistors
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2009.2035145

High-frequency high-electron-mobility transistors (HEMTs) were fabricated on AlInN/AlN/GaN heterostructures grown by low-pressure metal-organic chemical vapor deposition on a SiC substrate. The results presented in this letter confirm the high performance that is reachable by AlInN-based technology with an output power of 10.3 W/mm and a power-added efficiency of 51% at 10 GHz with a gate length of 0.25 ¿m. A good extrinsic transconductance value that is greater than 450 mS/mm and exceeding AlGaN/GaN HEMT results was also measured on these transistors. To our knowledge, these results are the best power results published on AlInN/GaN HEMTs. These good results were attributed to optimized heterostructure properties associated with low-resistance ohmic contacts and an effective passivation layer minimizing drain current slump in high-frequency operations.