Growth of silicon nitride films by bombarding amorphous silicon with N+ ions: MD simulation

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2009-09, Vol.267 (18), p.3245-3248
• Main Authors: Gou, F., Gleeson, M.A., Kleyn, A.W., Kruijs, R.W.E. van de, Yakshin, A.E., Bijkerk, F.
• Format: Article
• Language: English
• Subjects: Deposition films and coatings; doping and ion implantation; Ion implantation thin films; Molecular dynamics calculations in atomic and molecular physics; Silicon
• ISSN: 0168-583X; 1872-9584
• DOI: 10.1016/j.nimb.2009.06.091

In this study, the molecular dynamics simulation method was employed to investigate the growth of silicon nitride films by using N+ ions, with energies of 50, 100, 150 and 200eV, to bombard an amorphous silicon surface at 300K. After an initial period of N+ bombardment, saturation of the number of N atoms deposited on the surface is observed, which is in agreement with experiments. During subsequent steady state deposition, a balance between uptake of N by the surface and sputtering of previously deposited N is established. The Si(Nx) (x=1–4) and N(Siy) (y=1–3) bond configurations in the grown films are analyzed.