Characteristics of InGaAs Submonolayer Quantum-Dot and InAs Quantum-Dot Photonic-Crystal Vertical-Cavity Surface-Emitting Lasers

• Published in: Journal of lightwave technology 2008-06, Vol.26 (11), p.1387-1395
• Main Authors: Yang, H.-P.D., I-Chen Hsu, Ya-Hsien Chang, Fang-I Lai, Hsin-Chieh Yu, Lin, G., Ru-Shang Hsiao, Maleev, N.A., Blokhin, S.A., Hao-Chung Kuo, Chi, J.Y.
• Format: Article
• Language: English
• Subjects: Apertures; Fiber lasers; Fiber optics; Gallium arsenide; Indium arsenides; Indium gallium arsenide; Indium gallium arsenides; Optical fiber polarization; Optical fibers; Photonic-crystal (PhC); Power generation; Quantum dots; Quantum well lasers; quantum-dot (QD); submonolayer (SML); Surface emitting lasers; Vertical cavity surface emission lasers; Vertical cavity surface emitting lasers; vertical-cavity surface-emitting laser (VCSEL)
• ISSN: 0733-8724; 1558-2213
• DOI: 10.1109/JLT.2008.922172

We have made InGaAs submonolayer (SML) quantum-dot (QD) and InAs QD photonic-crystal vertical-cavity surface-emitting lasers (PhC-VCSELs) for fiber-optic communications in the 990 and 1300 nm ranges, respectively. The active region of the InGaAs SML QD PhC-VCSEL contains three InGaAs SML QD layers, with each of the SML QD layer formed by alternating depositions of InAs and GaAs. The active region of the InAs QD PhC-VCSEL contains 17 undoped InAs-InGaAs QD layers. Both types of QD PhC-VCSELs exhibit single-mode characteristics throughout the current range, with side-mode suppression ratio (SMSR) larger than 35 dB. A maximum output power of 5.7 mW has been achieved for the InGaAs SML QD PhC-VCSEL. The near-field image study of the QD PhC-VCSELs indicates that the laser beam is well confined by the photonic-crystal structure of the device.