Direct Measurements of Self-Sputtering, Swelling, and Deposition Effects of N-Type Low-Energy Ion Implantations

• Published in: IEEE transactions on plasma science 2009-10, Vol.37 (10), p.2082-2089
• Main Authors: Shu Qin, Kent Zhuang, Hu, Y.J., McTeer, A., Shifeng Lu
• Format: Article
• Language: English
• Subjects: Angle-Resolved X-ray Photoelectron Spectroscopy (ARXPS); Atomic force microscopy; Correlation; Deposition; Doping; Exact sciences and technology; Implants; Ion implantation; Ions; Photoelectron spectroscopy; Physics; Physics of gases, plasmas and electric discharges; Physics of plasmas and electric discharges; Plasma; Plasma applications; Plasma diagnostic techniques and instrumentation; plasma doping (PLAD); Plasma x-ray sources; Plasma-based ion implantation and deposition; Scanning electron microscopy; self-sputtering; Spectroscopy; Spectrum analysis; Sputter etching; Sputtering; Studies; surface swelling; Swelling; X-ray and γ-ray measurements; X-rays
• ISSN: 0093-3813; 1939-9375
• DOI: 10.1109/TPS.2009.2029111

Angle-resolved X-ray photoelectron spectroscopy method was used to study self-sputtering effects of different n-type low-energy doping techniques, including conventional monoatomic 75 As and 31 P beam-line ion implants and AsH 3 plasma doping (PLAD). It has been found that the self-sputtering effects of the beam-line implants correlate with the mass of ion species. As beam-line implant shows more serious self-sputtering effect than monoatomic P and B beam-line implants. Very low energy P implants show surface-swelling phenomena. PLAD process using AsH 3 gas species has no sputtering effects but has slight deposition under current process condition.