Effect of Cu/(Zn+Sn) ratio on the properties of co-evaporated Cu(2)ZnSnSe(4) thin films

The effect of Cu/(Zn+Sn) ratio on the properties of Cu(2)ZnSnSe(4) (CZTSe) thin films is investigated. CZTSe thin films with Cu/(Zn+Sn) ratio in the range 0.85-1.15 are deposited using 4-source co-evaporation technique onto glass substrates held at a substrate temperature T(s)=623 K and post-deposit...

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Bibliographic Details
Published in:Solar energy materials and solar cells 2010-02, Vol.94 (2), p.221-226
Main Authors: Babu, G Suresh, Kumar, Y.B. Kishore, Bhaskar, P Uday, Vanjari, Sundara Raja
Format: Article
Language:English
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Summary:The effect of Cu/(Zn+Sn) ratio on the properties of Cu(2)ZnSnSe(4) (CZTSe) thin films is investigated. CZTSe thin films with Cu/(Zn+Sn) ratio in the range 0.85-1.15 are deposited using 4-source co-evaporation technique onto glass substrates held at a substrate temperature T(s)=623 K and post-deposition annealed at T(pa)=723 K for 1 h in the selenium atmosphere. Powder X-ray diffraction (XRD) patterns reveal that CZTSe films deposited with Cu/(Zn+Sn) ratio in the range 0.90-1.10 are single phase and polycrystalline. CZTSe films, deposited with Cu/(Zn+Sn) ratio of 0.85 contain ZnSe as secondary phase and films with ratio of 1.15 contain Cu(2-X)Se as the secondary phase. The films are found to exhibit kesterite structure. Band gap of the films is found to increase with decrease in Cu/(Zn+Sn) ratio. Electrical resistivity of the films is found to lie in the range 0.02-23-[Omega]-cm depending on Cu/(Zn+Sn) ratio.
ISSN:0927-0248
DOI:10.1016/j.solmat.2009.09.005