GaN-Based LEDs With AZO:Y Upper Contact

We report the fabrication of GaN-based light-emitting diodes (LEDs) with ytterbium-doped alumina-zinc-oxide (AZO:Y) upper contact. It was found that AZO and AZO:Y are both highly transparent in the visible region with good thermal stability optically. However, it was found that AZO:Y is much more th...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2010-01, Vol.57 (1), p.134-139
Main Authors: Chen, P.H., Lai, W.C., Li-Chi Peng, Kuo, C.H., Chi-Li Yeh, Sheu, J.K., Tun, C.J.
Format: Article
Language:English
Subjects:
Annealing
AZO
AZO:Y
e-beam
Gallium nitride
Light emitting diodes
light-emitting diode (LED)
Power generation
Semiconductor device measurement
Thermal stability
Zinc oxide
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Summary:We report the fabrication of GaN-based light-emitting diodes (LEDs) with ytterbium-doped alumina-zinc-oxide (AZO:Y) upper contact. It was found that AZO and AZO:Y are both highly transparent in the visible region with good thermal stability optically. However, it was found that AZO:Y is much more thermally stable electrically, as compared with AZO. Furthermore, it was found that the output power of GaN LEDs with AZO upper contact decreased significantly from 2.80 to 2.30 mW after 700°C annealing. With the same annealing condition, it was found that output power decreased only slightly from 2.77 to 2.69 mW for the LEDs with AZO:Y upper contact.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2009.2033647