Extracting Energy Band Offsets on Long-Channel Thin Silicon-on-Insulator MOSFETs

Structural quantum confinement in long-channel thin silicon-on-insulator MOSFETs has been quantified using the temperature dependence of the subthreshold current. The results were compared with the shifts in the threshold voltage. Data were obtained from simulations after initial verification with e...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2009-09, Vol.56 (9), p.1999-2007
Main Authors: van der Steen, J.-L.P.J., Hueting, R.J.E., Schmitz, J.
Format: Article
Language:English
Subjects:
Applied sciences
Conduction band
Data mining
Data models
Density of states
Electronics
Energy bands
Exact sciences and technology
Logic gates
MOSFETs
Photonic band gap
Quantum confinement
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Simulation
Subthreshold current
Temperature dependence
Threshold voltage
Transistors
ultrathin semiconductor body (UTB) devices
valence band
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Summary:Structural quantum confinement in long-channel thin silicon-on-insulator MOSFETs has been quantified using the temperature dependence of the subthreshold current. The results were compared with the shifts in the threshold voltage. Data were obtained from simulations after initial verification with experimental data. This study demonstrates that, with the temperature dependence of the subthreshold current, shifts in the valence and conduction band edge can be extracted distinctively from changes in mobility and density of states (DOS), making this method more accurate in assessing the impact of structural quantum confinement than the commonly used threshold voltage method. Furthermore, we show that, with additional C - V data, a possible change in mobility and DOS can be disentangled.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2009.2026201