A method for considering the nonlinearity of the photorefractive effect with respect to the pump power in the analysis of electronic and thermal parameters of silicon structures

The photorefractive effect that is nonlinear with respect to the pump power is studied. The physical phenomena responsible for such a nonlinearity are analyzed. The features of the transport electronic parameters of semiconductors are considered for the nonlinear photorefractive effect.

Saved in:
Bibliographic Details
Published in:Journal of communications technology & electronics 2009-05, Vol.54 (5), p.583-587
Main Authors: Filatov, A. L., Lugovskoi, A. V.
Format: Article
Language:English
Subjects:
Communications Engineering
Communications technology
Electrons
Engineering
Experiments
Heat
Networks
Physical Processes in Electron Devices
Radiation
Semiconductors
Signal to noise ratio
Silicon
Studies
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The photorefractive effect that is nonlinear with respect to the pump power is studied. The physical phenomena responsible for such a nonlinearity are analyzed. The features of the transport electronic parameters of semiconductors are considered for the nonlinear photorefractive effect.
ISSN:1064-2269
1555-6557
DOI:10.1134/S106422690905012X