Loading…

A model of a terahertz radiation source based on a field-effect transistor

It is proposed to use nonlinear processes in 2D plasma in the channel of a field-effect transistor for frequency conversion (multiplication). It is shown that excitation of shock waves in the channel of a field-effect transistor by means of alternating voltage with a frequency of 10 10 −10 11 Hz app...

Full description

Saved in:
Bibliographic Details
Published in:Journal of communications technology & electronics 2009, Vol.54 (1), p.102-106
Main Authors: Ivanov, A. A., Ryzhii, V. I., Vostrikova, E. A., Chechetkin, V. M., Oparin, A. M.
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:It is proposed to use nonlinear processes in 2D plasma in the channel of a field-effect transistor for frequency conversion (multiplication). It is shown that excitation of shock waves in the channel of a field-effect transistor by means of alternating voltage with a frequency of 10 10 −10 11 Hz applied to the transistor gate results in the appearance of high frequency harmonics in the terahertz range.
ISSN:1064-2269
1555-6557
DOI:10.1134/S1064226909010094