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A model of a terahertz radiation source based on a field-effect transistor
It is proposed to use nonlinear processes in 2D plasma in the channel of a field-effect transistor for frequency conversion (multiplication). It is shown that excitation of shock waves in the channel of a field-effect transistor by means of alternating voltage with a frequency of 10 10 −10 11 Hz app...
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Published in: | Journal of communications technology & electronics 2009, Vol.54 (1), p.102-106 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | It is proposed to use nonlinear processes in 2D plasma in the channel of a field-effect transistor for frequency conversion (multiplication). It is shown that excitation of shock waves in the channel of a field-effect transistor by means of alternating voltage with a frequency of 10
10
−10
11
Hz applied to the transistor gate results in the appearance of high frequency harmonics in the terahertz range. |
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ISSN: | 1064-2269 1555-6557 |
DOI: | 10.1134/S1064226909010094 |