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A model of a terahertz radiation source based on a field-effect transistor
It is proposed to use nonlinear processes in 2D plasma in the channel of a field-effect transistor for frequency conversion (multiplication). It is shown that excitation of shock waves in the channel of a field-effect transistor by means of alternating voltage with a frequency of 10 10 −10 11 Hz app...
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| Published in: | Journal of communications technology & electronics 2009, Vol.54 (1), p.102-106 |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c346t-c61e572694444116fd9c34ab14d3e075c186e72d28790e415a506c7826e3ce203 |
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| cites | cdi_FETCH-LOGICAL-c346t-c61e572694444116fd9c34ab14d3e075c186e72d28790e415a506c7826e3ce203 |
| container_end_page | 106 |
| container_issue | 1 |
| container_start_page | 102 |
| container_title | Journal of communications technology & electronics |
| container_volume | 54 |
| creator | Ivanov, A. A. Ryzhii, V. I. Vostrikova, E. A. Chechetkin, V. M. Oparin, A. M. |
| description | It is proposed to use nonlinear processes in 2D plasma in the channel of a field-effect transistor for frequency conversion (multiplication). It is shown that excitation of shock waves in the channel of a field-effect transistor by means of alternating voltage with a frequency of 10
10
−10
11
Hz applied to the transistor gate results in the appearance of high frequency harmonics in the terahertz range. |
| doi_str_mv | 10.1134/S1064226909010094 |
| format | article |
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10
−10
11
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10
−10
11
Hz applied to the transistor gate results in the appearance of high frequency harmonics in the terahertz range.</description><subject>Communications Engineering</subject><subject>Communications technology</subject><subject>Electronics</subject><subject>Electrons</subject><subject>Engineering</subject><subject>Gravitational waves</subject><subject>Networks</subject><subject>Physical Processes in Electron Devices</subject><subject>Plasma</subject><subject>Radiation</subject><subject>Shock waves</subject><subject>Studies</subject><subject>Transistors</subject><subject>Velocity</subject><subject>Viscosity</subject><subject>Water waves</subject><issn>1064-2269</issn><issn>1555-6557</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>M0C</sourceid><recordid>eNp1kE1PwzAMhiMEEmPwA7hFHLgV7Hy1PU4Tn5rEAThXWepCp66BJDvAryfTOCAQvtjW-7yWbcZOES4Qpbp8RDBKCFNDDQhQqz02Qa11YbQu93Od5WKrH7KjGFcAsjYgJ-x-xte-pYH7jlueKNhXCumTB9v2NvV-5NFvgiO-tJFannvLu56GtqCuI5d4CnaMfUw-HLODzg6RTr7zlD1fXz3Nb4vFw83dfLYonFQmFc4g6TJvonIgmq6ts2CXqFpJUGqHlaFStKIqayCF2mowrqyEIelIgJyy893ct-DfNxRTs-6jo2GwI_lNbKRRUGV3Bs9-gat8y5h3a7A2UstKYoZwB7ngYwzUNW-hX9vw0SA029c2f16bPWLniZkdXyj8GPyv6QvAInhM</recordid><startdate>2009</startdate><enddate>2009</enddate><creator>Ivanov, A. 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| identifier | ISSN: 1064-2269 |
| ispartof | Journal of communications technology & electronics, 2009, Vol.54 (1), p.102-106 |
| issn | 1064-2269 1555-6557 |
| language | eng |
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| source | ABI/INFORM Global (ProQuest); Springer Nature |
| subjects | Communications Engineering Communications technology Electronics Electrons Engineering Gravitational waves Networks Physical Processes in Electron Devices Plasma Radiation Shock waves Studies Transistors Velocity Viscosity Water waves |
| title | A model of a terahertz radiation source based on a field-effect transistor |
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