Influence of sulfur, selenium and tellurium doping on optical, electrical and structural properties of thin films of lead salts

• Published in: Journal of alloys and compounds 2009-11, Vol.488 (1), p.334-338
• Main Authors: Kumar, Sushil, Lal, Bhajan, Aghamkar, P., Husain, M.
• Format: Article
• Language: English
• Subjects: Band gap; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electrical conductivity; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Lattice constant; Lead chalcogenides; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Other inorganic semiconductors; Other semiconductors; Physics
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2009.08.126

Lead salts and their alloys with detecting and lasing capabilities have technological importance. High quality polycrystalline thin films of undoped and doped lead salts have been deposited by vacuum evaporation technique onto ultra clean glass substrates. Influence of sulfur, selenium and tellurium doping on optical, electrical and structural properties of lead salts has been investigated. Absorption coefficient and band gap of films were determined by absorbance measurements in wavelength range 2500–5000 nm using FTIR spectrophotometer. Dark dc electrical conductivity and activation energy of films were measured in temperature range 300–380 K through I– V measurements. Crystal structure and lattice parameters of films were determined from X-ray diffraction patterns.