MeV Au ion induced modifications at Co/Si interface

We report on room temperature MeV Au ion induced modifications at the Co/Si interfaces. Nanometers size thin film of Co and Si were grown by ultra high vacuum (UHV) electron beam evaporation technique on Si(1 1 1) surface and were irradiated by 1.5 MeV Au 2+ ions at a fluence of 5 × 10 14 ions cm −2...

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Bibliographic Details
Published in:Applied surface science 2009-10, Vol.256 (2), p.572-575
Main Authors: Ghatak, J., Kabiraj, D., Satyam, P.V.
Format: Article
Language:English
Subjects:
Cobalt silicide
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Electron beam deposition
Energy filter imaging in TEM
Exact sciences and technology
Ion beam mixing
Nano-structured materials
Physics
Transmission electron microscopy
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Summary:We report on room temperature MeV Au ion induced modifications at the Co/Si interfaces. Nanometers size thin film of Co and Si were grown by ultra high vacuum (UHV) electron beam evaporation technique on Si(1 1 1) surface and were irradiated by 1.5 MeV Au 2+ ions at a fluence of 5 × 10 14 ions cm −2. High-resolution transmission electron microscopy (HRTEM) along with energy filter imaging technique has been employed to study the formation of Co–Si alloy at the interface. Formation of such surface alloy has been discussed in the light of ion-matter interaction in nanometer scale regime.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2009.08.063