Nearly White-Light Emission From GaN-Based Light-Emitting Diodes Integrated With a Porous SiO Layer

In this letter, we develop a nearly white-light-emitting device by integrating blue/green emission from a GaN-based light-emitting diode with red emission from a porous SiO 2 layer. The porous SiO 2 layer was fabricated by a novel process procedure to create Si nanocrystals on top of the n-type GaN...

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Bibliographic Details
Published in:IEEE photonics technology letters 2007-05, Vol.19 (9), p.662-664
Main Authors: Chih-Hao Hsieh, Min-Yung Ke, Ghien-An Shih, Tzu-Yang Chiu, Huang, J.J.
Format: Article
Language:English
Subjects:
Gallium nitride
Light emitting diodes
Light-emitting diodes (LEDs)
Lighting
Nanocrystals
Phosphors
Plasma temperature
Radiative recombination
Semiconductor diodes
Si-nanocrystal
SiO _{2} porous layer
Spontaneous emission
Voltage
white light
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Summary:In this letter, we develop a nearly white-light-emitting device by integrating blue/green emission from a GaN-based light-emitting diode with red emission from a porous SiO 2 layer. The porous SiO 2 layer was fabricated by a novel process procedure to create Si nanocrystals on top of the n-type GaN layer. Red light is generated from the metal-oxide-semiconductor (Ni-Au-SiO 2 oxide-n-type GaN) structure due to the electron-hole recombination in the Si nanocrystals. The device shows a blue light emission at a low biased voltage and nearly white-light emission (green and red colors) at a bias voltage between 14 and 16 V. Our results show the potential of applying such an integrated structure to white-light illumination
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2007.893760