Analysis of photoluminescence spectra for detection of stress-induced defects in silicon substrates after the polycrystalline diamond film deposition

The low temperature (5K) photoluminescence (PL) of silicon substrate in the range of 0.8–1.12eV before and after microwave plasma assisted chemical vapor deposition of polycrystalline diamond films was studied. The diamond films were deposited onto the pure (ρ∼3kOhmcm) dislocation-free silicon treat...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2009-12, Vol.404 (23-24), p.4616-4618
Main Authors: Bagaev, Victor S., Aminev, Denis F., Galkina, Tatiana I., Klokov, Andrey Yu, Krivobok, Vladimir S., Ralchenko, Victor G.
Format: Article
Language:English
Subjects:
Adhesion
Dislocation
Photoluminescence
Silicon/diamond interface
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Summary:The low temperature (5K) photoluminescence (PL) of silicon substrate in the range of 0.8–1.12eV before and after microwave plasma assisted chemical vapor deposition of polycrystalline diamond films was studied. The diamond films were deposited onto the pure (ρ∼3kOhmcm) dislocation-free silicon treated by mechanical polishing (MP) or by superior chemical–mechanical polishing (CMP). In the PL spectra of coated silicon substrates treated by CMP, the D1 and D2 lines related to the dislocation emission were registered. We suppose that the formation of dislocations in the substrate is caused by a strong adhesion of diamond film and as a consequence by the formation of inner tensions released as dislocations.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2009.08.138