Energy loss by keV ions in silicon

Using silicon photodiodes with an ultrathin passivation layer, the average total energy lost to silicon target electrons (electronic stopping) by incident low energy ions and the recoil target atoms they generate is directly measured. We find that the total electronic energy deposition and the ratio...

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Bibliographic Details
Published in:Physical review letters 2004-05, Vol.92 (21), p.213201-213201, Article 213201
Main Authors: Funsten, H O, Ritzau, S M, Harper, R W, Borovsky, J E, Johnson, R E
Format: Article
Language:English
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Summary:Using silicon photodiodes with an ultrathin passivation layer, the average total energy lost to silicon target electrons (electronic stopping) by incident low energy ions and the recoil target atoms they generate is directly measured. We find that the total electronic energy deposition and the ratio of the total nuclear to electronic stopping powers for the incident ions and their recoils each follow a simple, universal representation, thus enabling systematic prediction of ion-induced effects in silicon. We also observe a velocity threshold at 0.05 a.u. for the onset of electronic stopping.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.92.213201