Quantitative Transmission Electron Microscopy Analysis of the Pressure of Helium-Filled Cracks in Implanted Silicon

The pressure of crack-shaped cavities formed in silicon upon implantation with helium and subsequent annealing is quantitatively determined from the measurement of diffraction contrast features visible in transmission electron micrographs taken under well-defined dynamical two-beam conditions. For t...

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Bibliographic Details
Published in:Microscopy and microanalysis 2004-04, Vol.10 (2), p.199-214
Main Authors: Tillmann, K., Hüging, N., Trinkaus, H., Luysberg, M.
Format: Article
Language:English
Subjects:
Annealing
Cracks
Elasticity
Helium
Helium - chemistry
Ion beams
Microscopy, Electron - methods
Misfit dislocations
Quantitative Transmission Electron Microscopy at Jülich, Germany
Shear stress
Silicon
Silicon - chemistry
Stress, Mechanical
Substrates
Threading dislocations
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Summary:The pressure of crack-shaped cavities formed in silicon upon implantation with helium and subsequent annealing is quantitatively determined from the measurement of diffraction contrast features visible in transmission electron micrographs taken under well-defined dynamical two-beam conditions. For this purpose, simulated images, based on the elastic displacements associated with a Griffith crack, are matched to experimental micrographs, thus yielding unambiguous quantitative data on the ratio p/μ of the cavity pressure to the silicon matrix shear modulus. Experimental results demonstrate cavity radii of some 10 nm and p/μ values up to 0.22, which may be regarded as sufficiently high for the emission of dislocation loops from the cracks.
ISSN:1431-9276
1435-8115
DOI:10.1017/S1431927604040024