Characterization of interface of Al–Ni/a-Si for thin film transistor using high-resolution Rutherford backscattering spectrometry

High-resolution Rutherford backscattering spectrometry (HRBS) in combination with grazing angle argon sputtering was carried out to characterize the interface of aluminum–nickel (Al–Ni) alloy and amorphous-silicon films in a thin film transistor (TFT) for liquid crystal display (LCD). After thinning...

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Bibliographic Details
Published in:Micron (Oxford, England : 1993) England : 1993), 2009, Vol.40 (1), p.66-69
Main Authors: Ichihara, Chikara, Kawakami, Nobuyuki, Yasuno, Satoshi, Hino, Aya, Fujikawa, Kazuhisa, Kobayashi, Akira, Ochi, Mototaka, Gotoh, Hiroshi, Kugimiya, Toshihiro
Format: Article
Language:English
Subjects:
Al–Ni
Depth resolution
Direct contact
High-resolution RBS
TFT
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Summary:High-resolution Rutherford backscattering spectrometry (HRBS) in combination with grazing angle argon sputtering was carried out to characterize the interface of aluminum–nickel (Al–Ni) alloy and amorphous-silicon films in a thin film transistor (TFT) for liquid crystal display (LCD). After thinning the top Al–Ni layer by a 1-keV Ar sputtering, the sensitivity of the interface oxygen was improved to be twice higher than that before sputtering. The results revealed that the oxygen at the interface relates to the contact characteristics.
ISSN:0968-4328
1878-4291
DOI:10.1016/j.micron.2008.01.004