Lasing and optical gain around 500 nm from optically pumped lasers grown on c-plane GaN substrates

Using the variable stripe length method we demonstrated positive net optical gain around 500 nm for an optically pumped laser with InGaN/GaN multiple quantum wells grown on c-plane freestanding GaN substrates. We found that owing to low optical gain, reducing optical losses is crucial to increasing...

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Bibliographic Details
Published in:Optics letters 2009-02, Vol.34 (3), p.328-330
Main Authors: SIZOV, Dmitry S, BHAT, Rajaram, NAPIERALA, Jerome, JINGQUN XI, ALLEN, Donald E, GALLINAT, Chad S, ZAH, Chung-En
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Laser materials
Lasers
Optical materials
Optics
Physics
Semiconductor lasers
laser diodes
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Summary:Using the variable stripe length method we demonstrated positive net optical gain around 500 nm for an optically pumped laser with InGaN/GaN multiple quantum wells grown on c-plane freestanding GaN substrates. We found that owing to low optical gain, reducing optical losses is crucial to increasing lasing wavelength. We demonstrated lasing at 502 nm by using a 3-mm-long cavity with cleaved facets.
ISSN:0146-9592
1539-4794
DOI:10.1364/ol.34.000328