Microscopic view of charge injection in an organic semiconductor

We have measured the chemical potential and capacitance in a disordered organic semiconductor by electric force microscopy, following the electric field and interfacial charge density microscopically as the semiconductor undergoes a transition from Ohmic to space-charge limited conduction. Electric...

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Bibliographic Details
Published in:Physical review letters 2004-09, Vol.93 (11), p.116104.1-116104.4, Article 116104
Main Authors: SILVEIRA, William R, MAROHN, John A
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Exact sciences and technology
Metal-nonmetal contacts
Physics
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Summary:We have measured the chemical potential and capacitance in a disordered organic semiconductor by electric force microscopy, following the electric field and interfacial charge density microscopically as the semiconductor undergoes a transition from Ohmic to space-charge limited conduction. Electric field and charge density at the metal-organic interface are inferred from the chemical potential and current. The charge density at this interface increases with electric field much faster than is predicted by the standard diffusion-limited thermionic emission theories.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.93.116104