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Coherently photoinduced ferromagnetism in diluted magnetic semiconductors

Ferromagnetism is predicted in undoped diluted magnetic semiconductors illuminated by intense sub-band-gap laser radiation. The mechanism for photoinduced ferromagnetism is coherence between conduction and valence bands induced by the light which leads to an optical exchange interaction. The ferroma...

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Published in:Physical review letters 2004-09, Vol.93 (12), p.127201.1-127201.4, Article 127201
Main Authors: FERNANDEZ-ROSSIER, J, PIERMAROCCHI, C, CHEN, P, MACDONALD, A. H, SHAM, L. J
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description Ferromagnetism is predicted in undoped diluted magnetic semiconductors illuminated by intense sub-band-gap laser radiation. The mechanism for photoinduced ferromagnetism is coherence between conduction and valence bands induced by the light which leads to an optical exchange interaction. The ferromagnetic critical temperature T(C) depends both on the properties of the material and on the frequency and intensity of the laser and could be above 1K.
doi_str_mv 10.1103/physrevlett.93.127201
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subjects Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Magnetic properties and materials
Magnetic semiconductors
Physics
Studies of specific magnetic materials
title Coherently photoinduced ferromagnetism in diluted magnetic semiconductors
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