Direct Imaging of Rotational Stacking Faults in Few Layer Graphene

• Published in: Nano letters 2009-01, Vol.9 (1), p.102-106
• Main Authors: Warner, Jamie H, Rümmeli, Mark H, Gemming, Thomas, Büchner, Bernd, Briggs, G. Andrew D
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Crystallization - methods; Exact sciences and technology; Fullerenes and related materials; diamonds, graphite; Graphite - chemistry; Image Enhancement - methods; Image Interpretation, Computer-Assisted - methods; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Macromolecular Substances - chemistry; Materials science; Materials Testing - methods; Microscopy, Electron, Transmission - methods; Molecular Conformation; Nanostructures - chemistry; Nanostructures - ultrastructure; Nanotechnology - methods; Particle Size; Physics; Rotation; Specific materials; Surface Properties; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
• ISSN: 1530-6984; 1530-6992
• DOI: 10.1021/nl8025949

Few layer graphene nanostructures are directly imaged using aberration corrected high-resolution transmission electron microscopy with an electron accelerating voltage of 80 kV. We observe rotational stacking faults in the HRTEM images of 2−6 layers of graphene sheets, giving rise to Moiré patterns. By filtering in the frequency domain using a Fourier transform, we reconstruct the graphene lattice of each sheet and determine the packing structure and relative orientations of up to six separate sets. Direct evidence is obtained for few layer graphene sheets with packing that is different to the standard AB Bernal packing of bulk graphite. This has implications toward bilayer and few layer graphene electronic devices and the determination of their intrinsic structure.