Electric-field control of a hydrogenic donor's spin in a semiconductor

An ac electric field applied to a single donor-bound electron in a semiconductor modulates the orbital character of its wave function, which affects the electron's spin dynamics via the spin-orbit interaction. Numerical calculations of the spin dynamics of a single hydrogenic donor (Si) embedde...

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Bibliographic Details
Published in:Physical review letters 2009-01, Vol.102 (1), p.017603-017603, Article 017603
Main Authors: De, A, Pryor, Craig E, Flatté, Michael E
Format: Article
Language:English
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Summary:An ac electric field applied to a single donor-bound electron in a semiconductor modulates the orbital character of its wave function, which affects the electron's spin dynamics via the spin-orbit interaction. Numerical calculations of the spin dynamics of a single hydrogenic donor (Si) embedded in GaAs, using a real-space multiband k.p formalism, show the high symmetry of the hydrogenic donor state results in strongly nonlinear dependences of the electronic g tensor on applied fields. A nontrivial consequence is that the most rapid Rabi oscillations occur for electric fields modulated at a subharmonic of the Larmor frequency.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.102.017603