Electric-field control of a hydrogenic donor's spin in a semiconductor

An ac electric field applied to a single donor-bound electron in a semiconductor modulates the orbital character of its wave function, which affects the electron's spin dynamics via the spin-orbit interaction. Numerical calculations of the spin dynamics of a single hydrogenic donor (Si) embedde...

Full description

Saved in:
Bibliographic Details
Published in:Physical review letters 2009-01, Vol.102 (1), p.017603-017603, Article 017603
Main Authors: De, A, Pryor, Craig E, Flatté, Michael E
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c309t-4c4a4b6dd65b7fdf127eb6defa2322e0ec51b412958cb69fe9269d9e64af56113
cites cdi_FETCH-LOGICAL-c309t-4c4a4b6dd65b7fdf127eb6defa2322e0ec51b412958cb69fe9269d9e64af56113
container_end_page 017603
container_issue 1
container_start_page 017603
container_title Physical review letters
container_volume 102
creator De, A
Pryor, Craig E
Flatté, Michael E
description An ac electric field applied to a single donor-bound electron in a semiconductor modulates the orbital character of its wave function, which affects the electron's spin dynamics via the spin-orbit interaction. Numerical calculations of the spin dynamics of a single hydrogenic donor (Si) embedded in GaAs, using a real-space multiband k.p formalism, show the high symmetry of the hydrogenic donor state results in strongly nonlinear dependences of the electronic g tensor on applied fields. A nontrivial consequence is that the most rapid Rabi oscillations occur for electric fields modulated at a subharmonic of the Larmor frequency.
doi_str_mv 10.1103/PhysRevLett.102.017603
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_66989992</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>66989992</sourcerecordid><originalsourceid>FETCH-LOGICAL-c309t-4c4a4b6dd65b7fdf127eb6defa2322e0ec51b412958cb69fe9269d9e64af56113</originalsourceid><addsrcrecordid>eNpNkFFLwzAQx4Mobk6_wsiTPnXepW26PMpwKgwU0eeSJhdXaZuZtMK-vZUNFA6OO37_O_gxNkdYIEJ6-7Ldx1f63lDfLxDEArCQkJ6wKUKhkgIxO2VTgBQTBVBM2EWMnwCAQi7P2QSVyAuRiSlb3zdk-lCbxNXUWG581wffcO-45tu9Df6Dutpw6zsfbiKPu7rjY2keqa1H2g6m9-GSnTndRLo69hl7X9-_rR6TzfPD0-puk5gUVJ9kJtNZJa2VeVU461AUNI7ktEiFICCTY5WhUPnSVFI5UkIqq0hm2uUSMZ2x68PdXfBfA8W-bOtoqGl0R36IpZRqqZQSIygPoAk-xkCu3IW61WFfIpS_Bst_BsedKA8Gx-D8-GGoWrJ_saOy9AdBTnAn</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>66989992</pqid></control><display><type>article</type><title>Electric-field control of a hydrogenic donor's spin in a semiconductor</title><source>American Physical Society:Jisc Collections:APS Read and Publish 2023-2025 (reading list)</source><creator>De, A ; Pryor, Craig E ; Flatté, Michael E</creator><creatorcontrib>De, A ; Pryor, Craig E ; Flatté, Michael E</creatorcontrib><description>An ac electric field applied to a single donor-bound electron in a semiconductor modulates the orbital character of its wave function, which affects the electron's spin dynamics via the spin-orbit interaction. Numerical calculations of the spin dynamics of a single hydrogenic donor (Si) embedded in GaAs, using a real-space multiband k.p formalism, show the high symmetry of the hydrogenic donor state results in strongly nonlinear dependences of the electronic g tensor on applied fields. A nontrivial consequence is that the most rapid Rabi oscillations occur for electric fields modulated at a subharmonic of the Larmor frequency.</description><identifier>ISSN: 0031-9007</identifier><identifier>EISSN: 1079-7114</identifier><identifier>DOI: 10.1103/PhysRevLett.102.017603</identifier><identifier>PMID: 19257242</identifier><language>eng</language><publisher>United States</publisher><ispartof>Physical review letters, 2009-01, Vol.102 (1), p.017603-017603, Article 017603</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c309t-4c4a4b6dd65b7fdf127eb6defa2322e0ec51b412958cb69fe9269d9e64af56113</citedby><cites>FETCH-LOGICAL-c309t-4c4a4b6dd65b7fdf127eb6defa2322e0ec51b412958cb69fe9269d9e64af56113</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/19257242$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>De, A</creatorcontrib><creatorcontrib>Pryor, Craig E</creatorcontrib><creatorcontrib>Flatté, Michael E</creatorcontrib><title>Electric-field control of a hydrogenic donor's spin in a semiconductor</title><title>Physical review letters</title><addtitle>Phys Rev Lett</addtitle><description>An ac electric field applied to a single donor-bound electron in a semiconductor modulates the orbital character of its wave function, which affects the electron's spin dynamics via the spin-orbit interaction. Numerical calculations of the spin dynamics of a single hydrogenic donor (Si) embedded in GaAs, using a real-space multiband k.p formalism, show the high symmetry of the hydrogenic donor state results in strongly nonlinear dependences of the electronic g tensor on applied fields. A nontrivial consequence is that the most rapid Rabi oscillations occur for electric fields modulated at a subharmonic of the Larmor frequency.</description><issn>0031-9007</issn><issn>1079-7114</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNpNkFFLwzAQx4Mobk6_wsiTPnXepW26PMpwKgwU0eeSJhdXaZuZtMK-vZUNFA6OO37_O_gxNkdYIEJ6-7Ldx1f63lDfLxDEArCQkJ6wKUKhkgIxO2VTgBQTBVBM2EWMnwCAQi7P2QSVyAuRiSlb3zdk-lCbxNXUWG581wffcO-45tu9Df6Dutpw6zsfbiKPu7rjY2keqa1H2g6m9-GSnTndRLo69hl7X9-_rR6TzfPD0-puk5gUVJ9kJtNZJa2VeVU461AUNI7ktEiFICCTY5WhUPnSVFI5UkIqq0hm2uUSMZ2x68PdXfBfA8W-bOtoqGl0R36IpZRqqZQSIygPoAk-xkCu3IW61WFfIpS_Bst_BsedKA8Gx-D8-GGoWrJ_saOy9AdBTnAn</recordid><startdate>20090109</startdate><enddate>20090109</enddate><creator>De, A</creator><creator>Pryor, Craig E</creator><creator>Flatté, Michael E</creator><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope></search><sort><creationdate>20090109</creationdate><title>Electric-field control of a hydrogenic donor's spin in a semiconductor</title><author>De, A ; Pryor, Craig E ; Flatté, Michael E</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c309t-4c4a4b6dd65b7fdf127eb6defa2322e0ec51b412958cb69fe9269d9e64af56113</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>De, A</creatorcontrib><creatorcontrib>Pryor, Craig E</creatorcontrib><creatorcontrib>Flatté, Michael E</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Physical review letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>De, A</au><au>Pryor, Craig E</au><au>Flatté, Michael E</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electric-field control of a hydrogenic donor's spin in a semiconductor</atitle><jtitle>Physical review letters</jtitle><addtitle>Phys Rev Lett</addtitle><date>2009-01-09</date><risdate>2009</risdate><volume>102</volume><issue>1</issue><spage>017603</spage><epage>017603</epage><pages>017603-017603</pages><artnum>017603</artnum><issn>0031-9007</issn><eissn>1079-7114</eissn><abstract>An ac electric field applied to a single donor-bound electron in a semiconductor modulates the orbital character of its wave function, which affects the electron's spin dynamics via the spin-orbit interaction. Numerical calculations of the spin dynamics of a single hydrogenic donor (Si) embedded in GaAs, using a real-space multiband k.p formalism, show the high symmetry of the hydrogenic donor state results in strongly nonlinear dependences of the electronic g tensor on applied fields. A nontrivial consequence is that the most rapid Rabi oscillations occur for electric fields modulated at a subharmonic of the Larmor frequency.</abstract><cop>United States</cop><pmid>19257242</pmid><doi>10.1103/PhysRevLett.102.017603</doi><tpages>1</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0031-9007
ispartof Physical review letters, 2009-01, Vol.102 (1), p.017603-017603, Article 017603
issn 0031-9007
1079-7114
language eng
recordid cdi_proquest_miscellaneous_66989992
source American Physical Society:Jisc Collections:APS Read and Publish 2023-2025 (reading list)
title Electric-field control of a hydrogenic donor's spin in a semiconductor
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T06%3A38%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electric-field%20control%20of%20a%20hydrogenic%20donor's%20spin%20in%20a%20semiconductor&rft.jtitle=Physical%20review%20letters&rft.au=De,%20A&rft.date=2009-01-09&rft.volume=102&rft.issue=1&rft.spage=017603&rft.epage=017603&rft.pages=017603-017603&rft.artnum=017603&rft.issn=0031-9007&rft.eissn=1079-7114&rft_id=info:doi/10.1103/PhysRevLett.102.017603&rft_dat=%3Cproquest_cross%3E66989992%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c309t-4c4a4b6dd65b7fdf127eb6defa2322e0ec51b412958cb69fe9269d9e64af56113%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=66989992&rft_id=info:pmid/19257242&rfr_iscdi=true