Antibonding ground states in InAs quantum-dot molecules

Coherent tunneling between two InAs quantum dots forms delocalized molecular states. Using magnetophotoluminescence spectroscopy we show that when holes tunnel through a thin barrier, the lowest energy molecular state has bonding orbital character. However, as the thickness of the barrier increases,...

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Bibliographic Details
Published in:Physical review letters 2009-01, Vol.102 (4), p.047401-047401, Article 047401
Main Authors: Doty, M F, Climente, J I, Korkusinski, M, Scheibner, M, Bracker, A S, Hawrylak, P, Gammon, D
Format: Article
Language:English
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Summary:Coherent tunneling between two InAs quantum dots forms delocalized molecular states. Using magnetophotoluminescence spectroscopy we show that when holes tunnel through a thin barrier, the lowest energy molecular state has bonding orbital character. However, as the thickness of the barrier increases, the molecular ground state changes character from a bonding orbital to an antibonding orbital, confirming recent theoretical predictions. We explain how the spin-orbit interaction causes this counterintuitive reversal by using a four-band k.p model and atomistic calculations that account for strain.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.102.047401