Nonvolatile Bipolar Resistive Memory Switching in Single Crystalline NiO Heterostructured Nanowires

We have demonstrated the nonvolatile bipolar resistive memory switching in single crystalline NiO heterostructured nanowires for the first time. The self-assembled NiO nanowires are expected to open up opportunities to explore not only the detailed nanoscale mechanisms in NiO resistive memory switch...

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Bibliographic Details
Published in:Journal of the American Chemical Society 2009-03, Vol.131 (10), p.3434-3435
Main Authors: Oka, Keisuke, Yanagida, Takeshi, Nagashima, Kazuki, Tanaka, Hidekazu, Kawai, Tomoji
Format: Article
Language:English
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Summary:We have demonstrated the nonvolatile bipolar resistive memory switching in single crystalline NiO heterostructured nanowires for the first time. The self-assembled NiO nanowires are expected to open up opportunities to explore not only the detailed nanoscale mechanisms in NiO resistive memory switching but also next-generation nanoscale nonvolatile memory devices with the potential for high-density device integration and improved memory characteristics.
ISSN:0002-7863
1520-5126
DOI:10.1021/ja8089922