Measurements of kondo and spin splitting in single-electron transistors

We measure the spin splitting in a magnetic field B of localized states in single-electron transistors using a new method, inelastic spin-flip cotunneling. Because it involves only internal excitations, this technique gives the most precise value of the Zeeman energy Delta=/g/mu(B)B. In the same dev...

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Bibliographic Details
Published in:Physical review letters 2004-10, Vol.93 (16), p.166602.1-166602.4, Article 166602
Main Authors: KOGAN, A, AMASHA, S, GOLDHABER-GORDON, D, GRANGER, G, KASTNER, M. A, SHTRIKMAN, Hadas
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in mesoscopic or nanoscale materials and structures
Electronic transport in multilayers, nanoscale materials and structures
Exact sciences and technology
Physics
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Summary:We measure the spin splitting in a magnetic field B of localized states in single-electron transistors using a new method, inelastic spin-flip cotunneling. Because it involves only internal excitations, this technique gives the most precise value of the Zeeman energy Delta=/g/mu(B)B. In the same devices we also measure the splitting with B of the Kondo peak in differential conductance. The Kondo splitting appears only above a threshold field as predicted by theory. However, the magnitude of the Kondo splitting at high fields exceeds 2/g/mu(B)B in disagreement with theory.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.93.166602