Exposure of Epitaxial Graphene on SiC(0001) to Atomic Hydrogen

Graphene films on SiC exhibit coherent transport properties that suggest the potential for novel carbon-based nanoelectronics applications. Recent studies suggest that the role of the interface between single layer graphene and silicon-terminated SiC can strongly influence the electronic properties...

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Bibliographic Details
Published in:Nano letters 2009-04, Vol.9 (4), p.1462-1466
Main Authors: Guisinger, Nathan P, Rutter, Gregory M, Crain, Jason N, First, Phillip. N, Stroscio, Joseph A
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronics
Exact sciences and technology
Fullerenes and related materials
diamonds, graphite
Materials science
Molecular electronics, nanoelectronics
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Specific materials
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Summary:Graphene films on SiC exhibit coherent transport properties that suggest the potential for novel carbon-based nanoelectronics applications. Recent studies suggest that the role of the interface between single layer graphene and silicon-terminated SiC can strongly influence the electronic properties of the graphene overlayer. In this study, we have exposed the graphitized SiC to atomic hydrogen in an effort to passivate dangling bonds at the interface, while investigating the results utilizing room temperature scanning tunneling microscopy.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl803331q