An in-plane solid-liquid-solid growth mode for self-avoiding lateral silicon nanowires

We report an in-plane solid-liquid-solid (IPSLS) mode for obtaining self-avoiding lateral silicon nanowires (SiNW) in a reacting-gas-free annealing process, where the growth of SiNWs is guided by liquid indium drops that transform the surrounding a-SiratioH matrix into crystalline SiNWs. The SiNWs c...

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Published in:Physical review letters 2009-03, Vol.102 (12), p.125501-125501, Article 125501
Main Authors: Yu, Linwei, Alet, Pierre-Jean, Picardi, Gennaro, Roca i Cabarrocas, Pere
Format: Article
Language:English
Subjects:
Catalysis
Hydrogen - chemistry
Indium - chemistry
Microscopy, Atomic Force
Nanotechnology - methods
Nanowires - chemistry
Nickel - chemistry
Quantum Dots
Silicon - chemistry
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description We report an in-plane solid-liquid-solid (IPSLS) mode for obtaining self-avoiding lateral silicon nanowires (SiNW) in a reacting-gas-free annealing process, where the growth of SiNWs is guided by liquid indium drops that transform the surrounding a-SiratioH matrix into crystalline SiNWs. The SiNWs can be approximately mm long, with the smallest diameter down to approximately 22 nm. A high growth rate of >10(2) nm/s and rich evolution dynamics are revealed in a real-time in situ scanning electron microscopy observation. A qualitative growth model is proposed to account for the major features of this IPSLS SiNW growth mode.
doi_str_mv 10.1103/PhysRevLett.102.125501
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subjects Catalysis
Hydrogen - chemistry
Indium - chemistry
Microscopy, Atomic Force
Nanotechnology - methods
Nanowires - chemistry
Nickel - chemistry
Quantum Dots
Silicon - chemistry
title An in-plane solid-liquid-solid growth mode for self-avoiding lateral silicon nanowires
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