The dependence of the Schottky barrier height on carbon nanotube diameter for Pd–carbon nanotube contacts

Direct measurements are presented of the Schottky barrier (SB) heights of carbon nanotube devices contacted with Pd electrodes. The SB barrier heights were determined from the activation energy of the temperature-dependent thermionic emission current in the off-state of the devices. The barrier heig...

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Bibliographic Details
Published in:Nanotechnology 2009-04, Vol.20 (17), p.175204-175204
Main Authors: Svensson, Johannes, Sourab, Abdelrahim A, Tarakanov, Yury, Lee, Dong Su, Park, Seung Joo, Baek, Seung Jae, Park, Yung Woo, Campbell, Eleanor E B
Format: Article
Language:English
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Summary:Direct measurements are presented of the Schottky barrier (SB) heights of carbon nanotube devices contacted with Pd electrodes. The SB barrier heights were determined from the activation energy of the temperature-dependent thermionic emission current in the off-state of the devices. The barrier heights generally decrease with increasing diameter of the nanotubes and they are in agreement with the values expected when assuming little or no influence of Fermi level pinning.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/20/17/175204