N-Doping of Graphene through Electrothermal Reactions with Ammonia

Graphene is readily p-doped by adsorbates, but for device applications, it would be useful to access the n-doped material. Individual graphene nanoribbons were covalently functionalized by nitrogen species through high-power electrical joule heating in ammonia gas, leading to n-type electronic dopin...

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Bibliographic Details
Published in:Science (American Association for the Advancement of Science) 2009-05, Vol.324 (5928), p.768-771
Main Authors: Wang, Xinran, Li, Xiaolin, Zhang, Li, Yoon, Youngki, Weber, Peter K., Wang, Hailiang, Guo, Jing, Dai, Hongjie
Format: Article
Language:English
Subjects:
Ammonia
Annealing
Applied sciences
Atoms
Carbon
Chemical bonds
Chemicals
Chemistry
Doping
Electronics
Exact sciences and technology
Graphene
Materials
Molecules
Nitrogen
Oxygen
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:Graphene is readily p-doped by adsorbates, but for device applications, it would be useful to access the n-doped material. Individual graphene nanoribbons were covalently functionalized by nitrogen species through high-power electrical joule heating in ammonia gas, leading to n-type electronic doping consistent with theory. The formation of the carbon-nitrogen bond should occur mostly at the edges of graphene where chemical reactivity is high. X-ray photoelectron spectroscopy and nanometer-scale secondary ion mass spectroscopy confirm the carbon-nitrogen species in graphene thermally annealed in ammonia. We fabricated an n-type graphene field-effect transistor that operates at room temperature.
ISSN:0036-8075
1095-9203
DOI:10.1126/science.1170335