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Bond-Coupled Electron Transfer Processes: Cleavage of Si−Si Bonds in Disilanes
Photooxidation of 1,1,2,2-tetra-tert-butyl-1,2-diphenyldisilane, 1, by triplet sensitizers in CHCl3/CCl4 solutions yields chlorosilane, 2, in high chemical yield. The quantum yield for formation of 2 depends on the energy of the ion radical pair formed following initial electron transfer. Dissociati...
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Published in: | Journal of the American Chemical Society 2005-02, Vol.127 (6), p.1620-1621 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Photooxidation of 1,1,2,2-tetra-tert-butyl-1,2-diphenyldisilane, 1, by triplet sensitizers in CHCl3/CCl4 solutions yields chlorosilane, 2, in high chemical yield. The quantum yield for formation of 2 depends on the energy of the ion radical pair formed following initial electron transfer. Dissociative return electron transfer (DRET) is proposed as the mechanism for the highly efficient Si−Si bond cleavage in 1. DRET may be a useful strategy for the fragmentation of other such bonds in di-, oligo-, and polysilanes as well as other group 4A compounds using a variety of sensitizers with different spectral properties. |
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ISSN: | 0002-7863 1520-5126 |
DOI: | 10.1021/ja0432564 |