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Recent Advances in Electron Tomography: TEM and HAADF-STEM Tomography for Materials Science and Semiconductor Applications
Electron tomography is a well-established technique for three-dimensional structure determination of (almost) amorphous specimens in life sciences applications. With the recent advances in nanotechnology and the semiconductor industry, there is also an increasing need for high-resolution three-dimen...
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Published in: | Microscopy and microanalysis 2005-10, Vol.11 (5), p.378-400 |
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Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Electron tomography is a well-established technique for
three-dimensional structure determination of (almost) amorphous specimens
in life sciences applications. With the recent advances in nanotechnology
and the semiconductor industry, there is also an increasing need for
high-resolution three-dimensional (3D) structural information in physical
sciences. In this article, we evaluate the capabilities and limitations of
transmission electron microscopy (TEM) and high-angle-annular-dark-field
scanning transmission electron microscopy (HAADF-STEM) tomography for the
3D structural characterization of partially crystalline to highly
crystalline materials. Our analysis of catalysts, a hydrogen storage
material, and different semiconductor devices shows that features with a
diameter as small as 1–2 nm can be resolved in three dimensions by
electron tomography. For partially crystalline materials with small single
crystalline domains, bright-field TEM tomography provides reliable 3D
structural information. HAADF-STEM tomography is more versatile and can
also be used for high-resolution 3D imaging of highly crystalline
materials such as semiconductor devices. |
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ISSN: | 1431-9276 1435-8115 |
DOI: | 10.1017/S1431927605050361 |