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Recent Advances in Electron Tomography: TEM and HAADF-STEM Tomography for Materials Science and Semiconductor Applications
Electron tomography is a well-established technique for three-dimensional structure determination of (almost) amorphous specimens in life sciences applications. With the recent advances in nanotechnology and the semiconductor industry, there is also an increasing need for high-resolution three-dimen...
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| Published in: | Microscopy and microanalysis 2005-10, Vol.11 (5), p.378-400 |
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| Main Authors: | , , , , , , , |
| Format: | Article |
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| cited_by | cdi_FETCH-LOGICAL-c479t-ce25ad5c4eb7a6c50bec151b3f8adbb28d42f4b8bf28f84edabc9827dc3d0a3e3 |
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| cites | cdi_FETCH-LOGICAL-c479t-ce25ad5c4eb7a6c50bec151b3f8adbb28d42f4b8bf28f84edabc9827dc3d0a3e3 |
| container_end_page | 400 |
| container_issue | 5 |
| container_start_page | 378 |
| container_title | Microscopy and microanalysis |
| container_volume | 11 |
| creator | Kübel, Christian Voigt, Andreas Schoenmakers, Remco Otten, Max Su, David Lee, Tan-Chen Carlsson, Anna Bradley, John |
| description | Electron tomography is a well-established technique for
three-dimensional structure determination of (almost) amorphous specimens
in life sciences applications. With the recent advances in nanotechnology
and the semiconductor industry, there is also an increasing need for
high-resolution three-dimensional (3D) structural information in physical
sciences. In this article, we evaluate the capabilities and limitations of
transmission electron microscopy (TEM) and high-angle-annular-dark-field
scanning transmission electron microscopy (HAADF-STEM) tomography for the
3D structural characterization of partially crystalline to highly
crystalline materials. Our analysis of catalysts, a hydrogen storage
material, and different semiconductor devices shows that features with a
diameter as small as 1–2 nm can be resolved in three dimensions by
electron tomography. For partially crystalline materials with small single
crystalline domains, bright-field TEM tomography provides reliable 3D
structural information. HAADF-STEM tomography is more versatile and can
also be used for high-resolution 3D imaging of highly crystalline
materials such as semiconductor devices. |
| doi_str_mv | 10.1017/S1431927605050361 |
| format | article |
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three-dimensional structure determination of (almost) amorphous specimens
in life sciences applications. With the recent advances in nanotechnology
and the semiconductor industry, there is also an increasing need for
high-resolution three-dimensional (3D) structural information in physical
sciences. In this article, we evaluate the capabilities and limitations of
transmission electron microscopy (TEM) and high-angle-annular-dark-field
scanning transmission electron microscopy (HAADF-STEM) tomography for the
3D structural characterization of partially crystalline to highly
crystalline materials. Our analysis of catalysts, a hydrogen storage
material, and different semiconductor devices shows that features with a
diameter as small as 1–2 nm can be resolved in three dimensions by
electron tomography. For partially crystalline materials with small single
crystalline domains, bright-field TEM tomography provides reliable 3D
structural information. HAADF-STEM tomography is more versatile and can
also be used for high-resolution 3D imaging of highly crystalline
materials such as semiconductor devices.</description><identifier>ISSN: 1431-9276</identifier><identifier>EISSN: 1435-8115</identifier><identifier>DOI: 10.1017/S1431927605050361</identifier><identifier>PMID: 17481320</identifier><language>eng</language><publisher>New York, USA: Cambridge University Press</publisher><subject>Catalysis ; Catalysts ; Imaging, Three-Dimensional ; Life sciences ; Materials science ; Medical imaging ; Methods ; Microscopy, Electron, Scanning Transmission - methods ; Microscopy, Electron, Transmission - methods ; Nanostructured materials ; Nanotechnology ; Semiconductors ; Special Issue: Frontiers of Electron Microscopy in Materials Science ; Surface roughness ; Transmission electron microscopy</subject><ispartof>Microscopy and microanalysis, 2005-10, Vol.11 (5), p.378-400</ispartof><rights>2005 Microscopy Society of America</rights><rights>Copyright Cambridge University Press Oct 2005</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c479t-ce25ad5c4eb7a6c50bec151b3f8adbb28d42f4b8bf28f84edabc9827dc3d0a3e3</citedby><cites>FETCH-LOGICAL-c479t-ce25ad5c4eb7a6c50bec151b3f8adbb28d42f4b8bf28f84edabc9827dc3d0a3e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.cambridge.org/core/product/identifier/S1431927605050361/type/journal_article$$EHTML$$P50$$Gcambridge$$H</linktohtml><link.rule.ids>314,776,780,27903,27904,72706</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/17481320$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Kübel, Christian</creatorcontrib><creatorcontrib>Voigt, Andreas</creatorcontrib><creatorcontrib>Schoenmakers, Remco</creatorcontrib><creatorcontrib>Otten, Max</creatorcontrib><creatorcontrib>Su, David</creatorcontrib><creatorcontrib>Lee, Tan-Chen</creatorcontrib><creatorcontrib>Carlsson, Anna</creatorcontrib><creatorcontrib>Bradley, John</creatorcontrib><title>Recent Advances in Electron Tomography: TEM and HAADF-STEM Tomography for Materials Science and Semiconductor Applications</title><title>Microscopy and microanalysis</title><addtitle>Microsc Microanal</addtitle><description>Electron tomography is a well-established technique for
three-dimensional structure determination of (almost) amorphous specimens
in life sciences applications. With the recent advances in nanotechnology
and the semiconductor industry, there is also an increasing need for
high-resolution three-dimensional (3D) structural information in physical
sciences. In this article, we evaluate the capabilities and limitations of
transmission electron microscopy (TEM) and high-angle-annular-dark-field
scanning transmission electron microscopy (HAADF-STEM) tomography for the
3D structural characterization of partially crystalline to highly
crystalline materials. Our analysis of catalysts, a hydrogen storage
material, and different semiconductor devices shows that features with a
diameter as small as 1–2 nm can be resolved in three dimensions by
electron tomography. For partially crystalline materials with small single
crystalline domains, bright-field TEM tomography provides reliable 3D
structural information. HAADF-STEM tomography is more versatile and can
also be used for high-resolution 3D imaging of highly crystalline
materials such as semiconductor devices.</description><subject>Catalysis</subject><subject>Catalysts</subject><subject>Imaging, Three-Dimensional</subject><subject>Life sciences</subject><subject>Materials science</subject><subject>Medical imaging</subject><subject>Methods</subject><subject>Microscopy, Electron, Scanning Transmission - methods</subject><subject>Microscopy, Electron, Transmission - methods</subject><subject>Nanostructured materials</subject><subject>Nanotechnology</subject><subject>Semiconductors</subject><subject>Special Issue: Frontiers of Electron Microscopy in Materials Science</subject><subject>Surface roughness</subject><subject>Transmission electron microscopy</subject><issn>1431-9276</issn><issn>1435-8115</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp1kUtr3DAURkVpaF79Ad0E0UV2bvSwLbs7k0yaQkIgM10bPa5TBVtyJTuQ_PpoHjCQErSQru65R4IPoW-U_KCEioslzTmtmShJkRYv6Sd0lK6KrKK0-Lw502zdP0THMT4RQjgR5Rd0SEVeUc7IEXp9AA1uwo15lk5DxNbhRQ96Ct7hlR_8Y5Dj35efeLW4w9IZfNM0V9fZcl3u27jzAd_JCYKVfcRLbSHJNvwSBqu9M7OeEtOMY2-1nKx38RQddImGr7v9BP25Xqwub7Lb-1-_L5vbTOeinjINrJCm0DkoIUtdEAWaFlTxrpJGKVaZnHW5qlTHqq7KwUil64oJo7khkgM_Qedb7xj8vxni1A42auh76cDPsS1FyQhhZQK_vwOf_Bxc-lvLGGG14HWRILqFdPAxBujaMdhBhpeWknadSvtfKmnmbCee1QBmP7GLIQF8J5WDCtY8wv7pj7Vvgs-XnA</recordid><startdate>20051001</startdate><enddate>20051001</enddate><creator>Kübel, Christian</creator><creator>Voigt, Andreas</creator><creator>Schoenmakers, Remco</creator><creator>Otten, Max</creator><creator>Su, David</creator><creator>Lee, Tan-Chen</creator><creator>Carlsson, Anna</creator><creator>Bradley, John</creator><general>Cambridge University Press</general><general>Oxford University Press</general><scope>CGR</scope><scope>CUY</scope><scope>CVF</scope><scope>ECM</scope><scope>EIF</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7QO</scope><scope>7RV</scope><scope>7TK</scope><scope>7X7</scope><scope>7XB</scope><scope>88E</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>8FH</scope><scope>8FI</scope><scope>8FJ</scope><scope>8FK</scope><scope>ABUWG</scope><scope>AEUYN</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BBNVY</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>BHPHI</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>FR3</scope><scope>FYUFA</scope><scope>GHDGH</scope><scope>GNUQQ</scope><scope>HCIFZ</scope><scope>K9.</scope><scope>KB0</scope><scope>LK8</scope><scope>M0S</scope><scope>M1P</scope><scope>M7P</scope><scope>NAPCQ</scope><scope>P5Z</scope><scope>P62</scope><scope>P64</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>7X8</scope></search><sort><creationdate>20051001</creationdate><title>Recent Advances in Electron Tomography: TEM and HAADF-STEM Tomography for Materials Science and Semiconductor Applications</title><author>Kübel, Christian ; Voigt, Andreas ; Schoenmakers, Remco ; Otten, Max ; Su, David ; Lee, Tan-Chen ; Carlsson, Anna ; Bradley, John</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c479t-ce25ad5c4eb7a6c50bec151b3f8adbb28d42f4b8bf28f84edabc9827dc3d0a3e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Catalysis</topic><topic>Catalysts</topic><topic>Imaging, Three-Dimensional</topic><topic>Life sciences</topic><topic>Materials science</topic><topic>Medical imaging</topic><topic>Methods</topic><topic>Microscopy, Electron, Scanning Transmission - 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three-dimensional structure determination of (almost) amorphous specimens
in life sciences applications. With the recent advances in nanotechnology
and the semiconductor industry, there is also an increasing need for
high-resolution three-dimensional (3D) structural information in physical
sciences. In this article, we evaluate the capabilities and limitations of
transmission electron microscopy (TEM) and high-angle-annular-dark-field
scanning transmission electron microscopy (HAADF-STEM) tomography for the
3D structural characterization of partially crystalline to highly
crystalline materials. Our analysis of catalysts, a hydrogen storage
material, and different semiconductor devices shows that features with a
diameter as small as 1–2 nm can be resolved in three dimensions by
electron tomography. For partially crystalline materials with small single
crystalline domains, bright-field TEM tomography provides reliable 3D
structural information. HAADF-STEM tomography is more versatile and can
also be used for high-resolution 3D imaging of highly crystalline
materials such as semiconductor devices.</abstract><cop>New York, USA</cop><pub>Cambridge University Press</pub><pmid>17481320</pmid><doi>10.1017/S1431927605050361</doi><tpages>23</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1431-9276 |
| ispartof | Microscopy and microanalysis, 2005-10, Vol.11 (5), p.378-400 |
| issn | 1431-9276 1435-8115 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_67620026 |
| source | Cambridge University Press |
| subjects | Catalysis Catalysts Imaging, Three-Dimensional Life sciences Materials science Medical imaging Methods Microscopy, Electron, Scanning Transmission - methods Microscopy, Electron, Transmission - methods Nanostructured materials Nanotechnology Semiconductors Special Issue: Frontiers of Electron Microscopy in Materials Science Surface roughness Transmission electron microscopy |
| title | Recent Advances in Electron Tomography: TEM and HAADF-STEM Tomography for Materials Science and Semiconductor Applications |
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