Size-dependent Photoconductivity in MBE-Grown GaN−Nanowires

We report on electrical transport in the dark and under ultraviolet (UV) illumination through GaN nanowhiskers grown by molecular beam epitaxy (MBE), which is sensitively dependent on the column diameter. This new effect is quantitatively described by a size dependent surface recombination mechanism...

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Bibliographic Details
Published in:Nano letters 2005-05, Vol.5 (5), p.981-984
Main Authors: Calarco, Raffaella, Marso, Michel, Richter, Thomas, Aykanat, Ali I, Meijers, Ralph, v.d. Hart, André, Stoica, Toma, Lüth, Hans
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: structure, mechanical and thermal properties
Crystallization - methods
Electric Conductivity
Electric Wiring
Electrochemistry - instrumentation
Electrochemistry - methods
Electronics
Electrons
Exact sciences and technology
Gallium - analysis
Gallium - chemistry
Gallium - radiation effects
Microelectronic fabrication (materials and surfaces technology)
Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals
Nanostructures - analysis
Nanostructures - chemistry
Nanostructures - radiation effects
Nanostructures - ultrastructure
Nanotechnology - instrumentation
Nanotechnology - methods
Particle Size
Photochemistry - instrumentation
Photochemistry - methods
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Structure of solids and liquids
crystallography
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Description
Summary:We report on electrical transport in the dark and under ultraviolet (UV) illumination through GaN nanowhiskers grown by molecular beam epitaxy (MBE), which is sensitively dependent on the column diameter. This new effect is quantitatively described by a size dependent surface recombination mechanism. The essential ingredient for the interpretation of this effect is a diameter dependent recombination barrier, which arises from the interplay between column diameter and space charge layer extension at the column surface.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl0500306