Semiconductor Nanocrystal Quantum Dots on Single Crystal Semiconductor Substrates:  High Resolution Transmission Electron Microscopy

We report on high-resolution transmission electron microscope structural studies of InAs colloidal semiconductor nanocrystal quantum dots (NCQDs) on ultrathin GaAs (001) semiconductor single-crystal substrates. We employ a benign method for preparing electron transparent specimens that is suitable f...

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Bibliographic Details
Published in:Nano letters 2005-05, Vol.5 (5), p.969-973
Main Authors: Konkar, Atul, Lu, Siyuan, Madhukar, Anupam, Hughes, Steven M, Alivisatos, A. Paul
Format: Article
Language:English
Subjects:
Applied sciences
Arsenicals - analysis
Arsenicals - chemistry
Condensed matter: structure, mechanical and thermal properties
Crystallization - methods
Electronics
Exact sciences and technology
Gallium - analysis
Gallium - chemistry
Indium - analysis
Indium - chemistry
Materials Testing - methods
Microelectronic fabrication (materials and surfaces technology)
Microscopy, Electron, Transmission - methods
Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals
Nanostructures - chemistry
Nanostructures - ultrastructure
Nanotechnology - methods
Particle Size
Physics
Quantum Dots
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
Structure of solids and liquids
crystallography
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Summary:We report on high-resolution transmission electron microscope structural studies of InAs colloidal semiconductor nanocrystal quantum dots (NCQDs) on ultrathin GaAs (001) semiconductor single-crystal substrates. We employ a benign method for preparing electron transparent specimens that is suitable for the study of such fragile samples. The image contrast comprises contributions from electron scattering from both the NCs and the GaAs substrate. Long-term electron exposure studies reveal different damage mechanisms operative in the nanocrystals and the substrate.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl0502625