Spin manipulation of free two-dimensional electrons in Si/SiGe quantum wells

Understanding the mechanisms controlling the spin coherence of electrons in semiconductors is essential for designing structures for quantum computing applications. Using a pulsed electron paramagnetic resonance spectrometer, we measure spin echoes and deduce a spin coherence time (T2) of up to 3 mu...

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Bibliographic Details
Published in:Physical review letters 2005-04, Vol.94 (12), p.126802.1-126802.4, Article 126802
Main Authors: TYRYSHKIN, A. M, LYON, S. A, JANTSCH, W, SCHÄFFLER, F
Format: Article
Language:English
Subjects:
Classical and quantum physics: mechanics and fields
Exact sciences and technology
Physics
Quantum computation
Quantum information
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Summary:Understanding the mechanisms controlling the spin coherence of electrons in semiconductors is essential for designing structures for quantum computing applications. Using a pulsed electron paramagnetic resonance spectrometer, we measure spin echoes and deduce a spin coherence time (T2) of up to 3 mus for an ensemble of free two-dimensional electrons confined in a Si/SiGe quantum well. The decoherence can be understood in terms of momentum scattering causing fluctuating effective Rashba fields. Further confining the electrons into a nondegenerate (other than spin) ground state of a quantum dot can be expected to eliminate this decoherence mechanism.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.94.126802