Parallel Fabrication of Sub-50-nm Uniformly Sized Nanoparticles by Deposition through a Patterned Silicon Nitride Nanostencil

Using low-pressure chemical vapor deposition of silicon dioxide, we have reduced the size of 56-nm features in a silicon nitride membrane, called a stencil, down to 36 nm. Sub-50-nm uniformly sized nanoparticles are fabricated by electron-beam deposition of Pt through the stencil mask. A self-assemb...

Full description

Saved in:
Bibliographic Details
Published in:Nano letters 2005-06, Vol.5 (6), p.1129-1134
Main Authors: Yan, X.-M, Contreras, A. M, Koebel, M. M, Liddle, J. A, Somorjai, G. A
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: structure, mechanical and thermal properties
Electronics
Electrons
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Microscopy, Electron, Scanning
Molecular Conformation
Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals
Nanotechnology - methods
Nitrogen - chemistry
Physics
Platinum - chemistry
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silanes - chemistry
Silicon - chemistry
Silicon Dioxide - chemistry
Spectrometry, X-Ray Emission
Spectrophotometry, Infrared
Structure of solids and liquids
crystallography
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Using low-pressure chemical vapor deposition of silicon dioxide, we have reduced the size of 56-nm features in a silicon nitride membrane, called a stencil, down to 36 nm. Sub-50-nm uniformly sized nanoparticles are fabricated by electron-beam deposition of Pt through the stencil mask. A self-assembled monolayer (SAM) of tridecafluoro-1,1,2,2-tetrahydrooctyl-1-trichlorosilane was used to reduce Pt clogging of the nanosize holes during deposition as well as to protect the stencil during the postdeposition Pt removal. X-ray photoelectron spectroscopy shows that the SAM protects the stencil efficiently during this postdeposition removal of Pt.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl0506812