The single molecular precursor approach to metal telluride thin films: imino-bis(diisopropylphosphine tellurides) as examples

Interest in metal telluride thin films as components in electronic devices has grown recently. This tutorial review describes the use of single-source precursors for the preparation of metal telluride materials by aerosol-assisted chemical vapour deposition (AACVD) and acquaints the reader with the...

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Bibliographic Details
Published in:Chemical Society reviews 2007-10, Vol.36 (10), p.1622-1631
Main Authors: Ritch, Jamie S, Chivers, Tristram, Afzaal, Mohammad, O'Brien, Paul
Format: Article
Language:English
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Summary:Interest in metal telluride thin films as components in electronic devices has grown recently. This tutorial review describes the use of single-source precursors for the preparation of metal telluride materials by aerosol-assisted chemical vapour deposition (AACVD) and acquaints the reader with the basic techniques of materials characterization. The challenges in the design and synthesis of suitable precursors are discussed, focusing on metal complexes of the recently-developed imino-bis(diisopropylphosphine telluride) ligand. The generation of thin films and nanoplates of CdTe, Sb(2)Te(3) and In(2)Te(3) from these precursors are used as illustrative examples.
ISSN:0306-0012
1460-4744
DOI:10.1039/b605535b