Electrically tunable g factors in quantum dot molecular spin states

We present a magnetophotoluminescence study of individual vertically stacked InAs/GaAs quantum dot pairs separated by thin tunnel barriers. As an applied electric field tunes the relative energies of the two dots, we observe a strong resonant increase or decrease in the g factors of different spin s...

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Bibliographic Details
Published in:Physical review letters 2006-11, Vol.97 (19), p.197202-197202, Article 197202
Main Authors: Doty, M F, Scheibner, M, Ponomarev, I V, Stinaff, E A, Bracker, A S, Korenev, V L, Reinecke, T L, Gammon, D
Format: Article
Language:English
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Summary:We present a magnetophotoluminescence study of individual vertically stacked InAs/GaAs quantum dot pairs separated by thin tunnel barriers. As an applied electric field tunes the relative energies of the two dots, we observe a strong resonant increase or decrease in the g factors of different spin states that have molecular wave functions distributed over both quantum dots. We propose a phenomenological model for the change in g factor based on resonant changes in the amplitude of the wave function in the barrier due to the formation of bonding and antibonding orbitals.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.97.197202