Ultrathin Fullerene Films as High-Resolution Molecular Resists for Low-Voltage Electron-Beam Lithography

Hard to resist: Films of methanofullerenes (see scheme) can be used as resists for lithography at low electron‐beam energies (0.2 to 5 keV). Improvements in the sensitivity and maintained etch durability are seen as the electron energies are reduced from 20 to 1 keV. High‐resolution patterning is al...

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Bibliographic Details
Published in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2006-08, Vol.2 (8-9), p.1003-1006
Main Authors: Gibbons, Francis P., Robinson, Alex P. G., Palmer, Richard E., Manickam, Mayanditheuar, Preece, Jon A.
Format: Article
Language:English
Subjects:
electron beams
Electronics
Fullerenes
lithography
resists
thin films
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Summary:Hard to resist: Films of methanofullerenes (see scheme) can be used as resists for lithography at low electron‐beam energies (0.2 to 5 keV). Improvements in the sensitivity and maintained etch durability are seen as the electron energies are reduced from 20 to 1 keV. High‐resolution patterning is also demonstrated at low energies. The small molecular size of the fullerene derivatives alleviates problems associated with line‐edge roughness.
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.200500443