Landé g tensor in semiconductor nanostructures

Understanding the electronic structure of semiconductor nanostructures is not complete without a detailed description of their corresponding spin-related properties. Here we explore the response of the shell structure of InAs self-assembled quantum dots to magnetic fields oriented in several directi...

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Bibliographic Details
Published in:Physical review letters 2006-12, Vol.97 (23), p.236402-236402, Article 236402
Main Authors: Alegre, T P Mayer, Hernández, F G G, Pereira, A L C, Medeiros-Ribeiro, G
Format: Article
Language:English
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Summary:Understanding the electronic structure of semiconductor nanostructures is not complete without a detailed description of their corresponding spin-related properties. Here we explore the response of the shell structure of InAs self-assembled quantum dots to magnetic fields oriented in several directions, allowing mapping of the g-tensor modulus for the s and p shells. We find that the g tensors for the s and p shells exhibit a very different behavior. The s state, being more localized, probes the confinement potential details by sweeping the magnetic-field orientation from the growth direction towards the in-plane direction. For the p state, the g-tensor modulus is closer to that of the surrounding GaAs, consistent with a larger delocalization. In addition to the assessment of the g tensor, these results reveal further details of the confining potentials of self-assembled quantum dots that have not yet been probed.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.97.236402