Three-Dimensional Morphology of GaP−GaAs Nanowires Revealed by Transmission Electron Microscopy Tomography

We have investigated the morphology of heterostructured GaP−GaAs nanowires grown by metal−organic vapor-phase epitaxy as a function of growth temperature and V/III precursor ratio. The study of heterostructured nanowires with transmission electron microscopy tomography allowed the three-dimensional...

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Bibliographic Details
Published in:Nano letters 2007-10, Vol.7 (10), p.3051-3055
Main Authors: Verheijen, Marcel A, Algra, Rienk E, Borgström, Magnus T, Immink, George, Sourty, Erwan, van Enckevort, Willem J. P, Vlieg, Elias, Bakkers, Erik P. A. M
Format: Article
Language:English
Subjects:
Arsenicals - chemistry
Chemical synthesis methods
Computer Simulation
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Crystallization - methods
Exact sciences and technology
Gallium - chemistry
Imaging, Three-Dimensional - methods
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Macromolecular Substances - chemistry
Materials science
Materials Testing
Methods of nanofabrication
Microscopy, Electron, Transmission - methods
Models, Chemical
Models, Molecular
Molecular Conformation
Nanocrystalline materials
Nanoscale materials and structures: fabrication and characterization
Nanotechnology - methods
Nanotubes - chemistry
Nanotubes - ultrastructure
Particle Size
Phosphines - chemistry
Physics
Surface Properties
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Temperature
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Summary:We have investigated the morphology of heterostructured GaP−GaAs nanowires grown by metal−organic vapor-phase epitaxy as a function of growth temperature and V/III precursor ratio. The study of heterostructured nanowires with transmission electron microscopy tomography allowed the three-dimensional morphology to be resolved, and discrimination between the effect of axial (core) and radial (shell) growth on the morphology. A temperature- and precursor-dependent structure diagram for the GaP nanowire core morphology and the evolution of the different types of side facets during GaAs and GaP shell growth were constituted.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl071541q