Chemistry of Organometallic Compounds on Silicon: The First Step in Film Growth

The continuous decrease in size of electronic devices has reached a critical point at which the molecular‐level understanding of chemical processes is imperative. Metal‐containing films, an important part of every circuit, are currently deposited from a myriad of organometallic compounds, in order t...

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Bibliographic Details
Published in:Chemistry : a European journal 2007-01, Vol.13 (33), p.9164-9176
Main Authors: Rodríguez-Reyes, Juan Carlos F., Teplyakov, Andrew V.
Format: Article
Language:English
Subjects:
organometallic compounds
reaction mechanisms
silicon
surface chemistry
thin films
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Summary:The continuous decrease in size of electronic devices has reached a critical point at which the molecular‐level understanding of chemical processes is imperative. Metal‐containing films, an important part of every circuit, are currently deposited from a myriad of organometallic compounds, in order to control the first stages of film growth and ultimately produce an atomically defined interface. This article outlines recent molecular‐level investigations on reactions of organometallic compounds with silicon surfaces. The role of surface structure and chemical state is placed in a framework of future challenges and opportunities for applications in electronics. Silicon surface chemistry is facing a new challenge: Mechanistic control of surface reactions with a variety of organometallic compounds is necessary to ensure the future of microelectronics. This paper outlines previous investigations, both experimental and theoretical, that pursue this molecular‐level control of surface reactions (see scheme), and offers possible directions for future studies.
ISSN:0947-6539
1521-3765
DOI:10.1002/chem.200700856